| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE3300 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
| NTE3301 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
| NTE3302 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
| NTE3303 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. | distributor | TO220 | 3 | 0°C | 150°C | 19 K |
| NTE331 | Silicon complementary NPN transistor. Audio power amp, switch. | distributor | TO220 | 3 | 0°C | 150°C | 21 K |
| NTE332 | Silicon complementary PNP transistor. Audio power amp, switch. | distributor | TO220 | 3 | 0°C | 150°C | 21 K |
| VTE3322LA | GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). | distributor | - | 2 | -40°C | 100°C | 22 K |
| VTE3324LA | GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). | distributor | - | 2 | -40°C | 100°C | 22 K |
| VTE3372LA | GaALAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). | distributor | - | 2 | -40°C | 100°C | 25 K |
| VTE3374LA | GaALAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 10.16 mm, diameter 2.1 mm). | distributor | - | 2 | -40°C | 100°C | 25 K |
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