| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXTM20N60 | 600V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 105 K |
| TM200EZ-24 | 200A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -40°C | 150°C | 62 K |
| TM200EZ-2H | 200A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -40°C | 150°C | 62 K |
| TM200EZ-H | 200A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -40°C | 150°C | 62 K |
| TM200EZ-M | 200A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -40°C | 150°C | 62 K |
| TM200GZ-24 | 200A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -40°C | 150°C | 62 K |
| TM200GZ-2H | 200A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -40°C | 150°C | 62 K |
| TM200GZ-H | 200A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -40°C | 150°C | 62 K |
| TM200RZ-H | 200A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -40°C | 150°C | 62 K |
| TM200RZ-M | 200A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 6 | -40°C | 150°C | 62 K |
| [1] [2] 3 [4] |
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