| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STP80N06-10 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
| STP80NE06-10 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
| STP80NF10 | N-CHANNEL 100V - 0.014 OHM - 80A TO-220 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 48 K |
| STP80NF55L-06 | N-CHANNEL 55V - 0.005 OHM - 80A TO220 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
| TP801C04 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 71 K |
| TP801C06 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 74 K |
| TP802C04 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 70 K |
| TP802C06 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 76 K |
| TP802C09 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 74 K |
| TP805C04 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 71 K |
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