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tw7n

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTW7N80ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C220 K
STW7NA100N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS-Thomson-Microelectronics----76 K
STW7NA80N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----122 K
STW7NA90N-CHANNEL 900V - 1.05 OHM - 7A - TO-247/ISOWATT218 FAST POWER MOSFETSGS-Thomson-Microelectronics----111 K
STW7NB80N-CHANNEL 800V - 1.6 OHM - 6.5A - TO-247 POWERMESH MOSFETSGS-Thomson-Microelectronics----88 K
STW7NC80ZN-CHANNEL 800V 1.5OHM 6A TO-247 ZENER-PROTECTED POWERMESH MOSFETSGS-Thomson-Microelectronics----248 K
STW7NC90ZN-CHANNEL 900V 1.55 OHM 6A TO-247 ZENER-PROTECTED POWERMESH III MOSFETSGS-Thomson-Microelectronics----243 K
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