| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BAV100 | Small signal switching diode for general purpose applications | Vishay-Telefunken | SOD80 MiniMELF | - | - | - | 54 K |
| HYM64V1005GU-50 | 1M x 64bit DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 74 K |
| HYM64V1005GU-60 | 1M x 64bit DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 74 K |
| HYM72V1005GU-50 | 1M x 72bit DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 74 K |
| HYM72V1005GU-60 | 1M x 72bit DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 74 K |
| HYS64V1000GU-50 | 1M x 64bit EDO-DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 68 K |
| HYS64V1000GU-60 | 1M x 64bit EDO-DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 68 K |
| HYS64V1000GU-70 | 1M x 64bit EDO-DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 68 K |
| NM27C256V100 | 256K-Bit (32K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | PLCC | 32 | - | - | 110 K |
| NM27C512V100 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | PLCC | 32 | - | - | 105 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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