| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416V1004CJL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
| KM416V1004CT-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| RBV1000D | 50 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 41 K |
| RBV1001D | 100 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 41 K |
| RBV1002D | 200 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 41 K |
| RBV1004D | 400 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 41 K |
| RBV1006D | 600 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 41 K |
| RBV1008 | 800 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 19 K |
| RBV1008D | 800 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 41 K |
| UTV100B | 100 W, 28 V, 470-860 MHz common emitter transistor | distributor | 55RT | 3 | - | - | 234 K |
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