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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BAV100General purpose diode. Repetitive peak reverse voltage 60 V.Philips-SemiconductorsSOD80C20°C175°C47 K
KM416V1004AJ-63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicSOJ420°C70°C1 M
KM416V1004AJ-L73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicSOJ420°C70°C1 M
KM416V1004AT-F73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicTSOP II440°C70°C1 M
LC35V1000BMAsynchronous Silicon Gate 1M (131,072 words x8 bits) SRAMSANYO-Electric-Co--Ltd-----178 K
LC35V1000BTSAsynchronous Silicon Gate 1M (131,072 words x8 bits) SRAMSANYO-Electric-Co--Ltd-----178 K
V100ZA05Radial lead metal-oxide varistors, 60VHarris-Semiconductor-2-55°C85°C423 K
V100ZA15Radial lead metal-oxide varistors, 60VHarris-Semiconductor-2-55°C85°C423 K
V100ZA3Radial lead metal-oxide varistors, 60VHarris-Semiconductor-2-55°C85°C423 K
V100ZA4Radial lead metal-oxide varistors, 60VHarris-Semiconductor-2-55°C85°C423 K
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