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v1001

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HN58V1001FP-251M EEPROM (128-kword x 8-bit) ready/busy and RES functiondistributorplastic SOP320°C70°C119 K
HN58V1001P-251M EEPROM (128-kword x 8-bit) ready/busy and RES functiondistributorplastic DIP320°C70°C119 K
HN58V1001T-251M EEPROM (128-kword x 8-bit) ready/busy and RES functiondistributorplastic TSOP320°C70°C119 K
LE28CV1001M-121MEG (131072words x 8bit) flash memorySANYO-Electric-Co--Ltd-SOP32320°C70°C276 K
LE28CV1001M-151MEG (131072words x 8bit) flash memorySANYO-Electric-Co--Ltd-SOP32320°C70°C276 K
LE28CV1001T-121MEG (131072words x 8bit) flash memorySANYO-Electric-Co--Ltd-TSOP32320°C70°C276 K
LE28CV1001T-151MEG (131072words x 8bit) flash memorySANYO-Electric-Co--Ltd-TSOP32320°C70°C276 K
TC55V1001AFT-10131,072-word by 8 bit static RAM, access time 100nsToshibaTSOP320°C70°C562 K
TC55V1001AFT-10L131,072-word by 8 bit static RAM, access time 100nsToshibaTSOP320°C70°C562 K
TC55V1001ATR-10131,072-word by 8 bit static RAM, access time 100nsToshibaTSOP320°C70°C562 K
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