Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BS62LV256DC | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit | distributor | DICE | 28 | 0°C | 70°C | 331 K |
BS62LV256DI | 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit | distributor | DICE | 28 | -40°C | 85°C | 331 K |
BS62UV256DC | 150ns 10-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 32K x 8bit | distributor | DICE | 28 | 0°C | 70°C | 331 K |
BS62UV256DI | 150ns 10-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 32K x 8bit | distributor | DICE | 28 | -40°C | 85°C | 331 K |
KM416V256DJ-6 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 83 K |
KM416V256DJ-7 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 83 K |
KM416V256DLJ-5 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 83 K |
KM416V256DLJ-6 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 83 K |
KM416V256DLJ-7 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 83 K |
KM416V256DT-7 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
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