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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AQV410EHPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Through hole terminal. Tube packing style.distributor-6-40°C85°C54 K
BYV4100Fast soft-recovery controlled avalanche rectifierPhilips-SemiconductorsSOD64---52 K
KM44V4100CK-54M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung-ElectronicSOJ240°C70°C340 K
KM44V4100CK-64M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung-ElectronicSOJ240°C70°C340 K
KM44V4100CKL-54M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung-ElectronicSOJ240°C70°C340 K
KM44V4100CKL-64M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung-ElectronicSOJ240°C70°C340 K
KM44V4100CS-54M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung-ElectronicTSOP II240°C70°C340 K
KM44V4100CS-64M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung-ElectronicTSOP II240°C70°C340 K
KM44V4100CSL-54M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung-ElectronicTSOP II240°C70°C340 K
KM44V4100CSL-64M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung-ElectronicTSOP II240°C70°C340 K
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