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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AQV410EHAPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tube packing style.distributor-6-40°C85°C54 K
AQV410EHAXPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 1/2/3-pin sidedistributor-6-40°C85°C54 K
AQV410EHAZPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin sidedistributor-6-40°C85°C54 K
AQV410EHAZPhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin sidedistributor-6-40°C85°C54 K
FJV4101RPNP Epitaxial Silicon TransistorFairchild-Semiconductor----55 K
FJV4102RPNP Epitaxial Silicon TransistorFairchild-Semiconductor----55 K
FJV4103RPNP Epitaxial Silicon TransistorFairchild-Semiconductor----56 K
FJV4104RPNP Epitaxial Silicon TransistorFairchild-Semiconductor----89 K
FJV4104RPNP Epitaxial Silicon TransistorFairchild-Semiconductor----89 K
FJV4105RPNP Epitaxial Silicon TransistorFairchild-Semiconductor----88 K
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