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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HY57V651620BTC-55Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 183MHzdistributorTSOP II540°C70°C81 K
HY57V651620BTC-6Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 166MHzdistributorTSOP II540°C70°C81 K
MBM29LV651UE12TNFlash memory CMOS 64M (4M x 16)bitFujitsu-Microelectronisplastic TSOP48-40°C85°C625 K
MBM29LV651UE12TRFlash memory CMOS 64M (4M x 16)bitFujitsu-Microelectronisplastic TSOP48-40°C85°C625 K
MBM29LV651UE90TNFlash memory CMOS 64M (4M x 16)bitFujitsu-Microelectronisplastic TSOP48-40°C85°C625 K
MBM29LV651UE90TRFlash memory CMOS 64M (4M x 16)bitFujitsu-Microelectronisplastic TSOP48-40°C85°C625 K
MD51V65165-50JA4,194,304-word x 16-bit dynamic RAMdistributorSOJ500°C70°C343 K
MD51V65165-50TA4,194,304-word x 16-bit dynamic RAMdistributorTSOP500°C70°C343 K
MD51V65165-60JA4,194,304-word x 16-bit dynamic RAMdistributorSOJ500°C70°C343 K
MD51V65165-60TA4,194,304-word x 16-bit dynamic RAMdistributorTSOP500°C70°C343 K
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