| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ISPLSI2192VL-100LB144 | 100 MHz 2.5V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | BGA | 144 | -55°C | 125°C | 163 K |
| ISPLSI2192VL-100LT128 | 100 MHz 2.5V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | TQFP | 128 | -55°C | 125°C | 163 K |
| WMS512K8VL-100CCE | 100ns; low voltage operation: 3.3V +-10% power supply; 512K x 8 monolithic SRAM | distributor | DIP | 32 | 0°C | 70°C | 68 K |
| WMS512K8VL-100CCEA | 100ns; low voltage operation: 3.3V +-10% power supply; 512K x 8 monolithic SRAM | distributor | DIP | 32 | 0°C | 70°C | 68 K |
| WMS512K8VL-100CCEA | 100ns; low voltage operation: 3.3V +-10% power supply; 512K x 8 monolithic SRAM | distributor | DIP | 32 | 0°C | 70°C | 68 K |
| WMS512K8VL-100CIE | 100ns; low voltage operation: 3.3V +-10% power supply; 512K x 8 monolithic SRAM | distributor | DIP | 32 | -40°C | 85°C | 68 K |
| WMS512K8VL-100CIEA | 100ns; low voltage operation: 3.3V +-10% power supply; 512K x 8 monolithic SRAM | distributor | DIP | 32 | -40°C | 85°C | 68 K |
| WMS512K8VL-100CMEA | 100ns; low voltage operation: 3.3V +-10% power supply; 512K x 8 monolithic SRAM | distributor | DIP | 32 | -55°C | 125°C | 68 K |
| WMS512K8VL-100DEME | 100ns; low voltage operation: 3.3V +-10% power supply; 512K x 8 monolithic SRAM | distributor | SOJ | 32 | -55°C | 125°C | 68 K |
| WMS512K8VL-100DEMEA | 100ns; low voltage operation: 3.3V +-10% power supply; 512K x 8 monolithic SRAM | distributor | SOJ | 32 | -55°C | 125°C | 68 K |
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