| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 30KW102 | 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 166 K |
| 30KW102A | 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 166 K |
| M29W102BB50NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 50ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 154 K |
| M29W102BB70NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 70ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 154 K |
| M29W102BB90NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 90ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 154 K |
| M29W102BT50NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 50ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 154 K |
| M29W102BT70NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 70ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 154 K |
| M29W102BT90NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 90ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 154 K |
| M29W102BT90NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 90ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 154 K |
| UT62W1024LS-35L | Access time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAM | distributor | STSOP | 32 | 0°C | 70°C | 230 K |
| [1] [2] [3] 4 [5] |
|---|
