| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHW13N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 41 K |
| PHW13N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 41 K |
| SGW13N60UF | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 536 K |
| SGW13N60UFD | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 595 K |
| SGW13N60UFD | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 595 K |
| STW13NB60 | N-CHANNEL 600V - 0.48 OHM - 13A - TO-247/ISOWATT218 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 111 K |
| STW13NK60Z | N-CHANNEL 600V - 0.48 OHM - 13A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 657 K |
| 1 |
|---|
