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Joined: Apr 22, 2009
Posts: 27
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 Posted: 14/05/2009 3:19 am Post subject: MDS170L Datasheet |
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MDS170L Datasheet
Edited by (http://www.seekic.com),the leading IC purchasers' best choice of platform for one-stop valued service!
Description:
The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. Low thermal resistance Solder Sealed Package reduces junction temperature, extends life.
The above info is from (www.seekic.com)
Features:
The above info is from (www.seekic.com)
(Absolute) Maximum Ratings:
Maximum Power Dissipation @ 25℃
350 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
50 Volts
BVebo Emitter to Base Voltage
3.5 Volts
Ic Collector Current
15 Amps
Maximum Temperatures
Storage Temperature
-65 to + 200℃
Operating Junction Temperature
+ 200℃
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