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M464S1724CT1 Datasheet

  
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M464S1724CT1 Datasheet
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chenweiwei2009
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PostPosted: 15/05/2009 4:26 am    Post subject: M464S1724CT1 Datasheet Reply with quote

M464S1724CT1 Datasheet
Edited by (http://www.seekic.com/),the leading IC purchasers' best choice of platform for one-stop valued service!
Description:

The Samsung M464S1724CT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1724CT1 consists of eight CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S1724CT1 is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.



The above info is from (www.seekic.com)

Features:
• Performance range
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,250mil) , double sided component

The above info is from (www.seekic.com)

(Absolute) Maximum Ratings:
Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V
Storage temperature TSTG -55 ~ +150 ℃
Power dissipation PD 8 W
Short circuit current IOS 50 mA

Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Edited by (www.seekic.com) ,the biggest IC PDF and datasheet download site.
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