Make Kazus.info Your Home Page  |  Add to favorites Guest (Login) Russian version  |  Datasheets  
KAZUS.INFO - Datasheets, Electronic circuits, Repair manuals, Electronic compoinents & Forums.    
     

ADG1209 Datasheet

  
Example: pic16f84

ADG1209 Datasheet
View previous topic :: View next topic
 
Post new topic   Reply to topic    Electronics Forum Index -> Circuits Diagrams search
Author Message
tinachen1010
Electronic God


Joined: Jun 16, 2008
Posts: 216

PostPosted: 03/07/2009 3:36 am    Post subject: ADG1209 Datasheet Reply with quote

ADG1209 Datasheet

Edited by (http://www.seekic.com/icdata/ADG1209.html),the leading IC purchasers' best choice of platform for one-stop valued service!
Description:

The ADG1208 and ADG1209 are monolithic, iCMOS analog multiplexers comprising eight single channels and four differential channels, respectively. The ADG1208 switches one of eight inputs to a common output as determined by the 3-bit binary address lines A0, A1, and A2. The ADG1209 switches one of four differential inputs to a common differential output as determined by the 2-bit binary address lines A0 and A1. An EN input on both devices is used to enable or disable the device. When disabled, all channels are switched off. When on, each channel conducts equally well in both directions and has an input signal range that extends to the supplies.
The iCMOS (industrial CMOS) modular manufacturing process combines high voltage CMOS (complementary metal-oxide semiconductor) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.
The ultralow capacitance and exceptionally low charge injection of these multiplexers make them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Figure 2 shows that there is minimum charge injection over the entire signal range of the device. iCMOS construction also ensures ultralow power dissipation, making the parts ideally suited for portable and battery powered instruments.



Features:
·<1 pC charge injection over full signal range
·1 pF off capacitance
·33 V supply range
·120 Ω on resistance
·Fully specified at ±15 V/+12 V
·3 V logic compatible inputs
·Rail-to-rail operation
·Break-before-make switching action
·Available in 16-lead TSSOP and 4 mm ? 4 mm LFCSP_VQ
·Typical power consumption < 0.03 μW

(Absolute) Maximum Ratings:
Parameter Rating
VDD to VSS 35 V
VDD to GND −0.3 V to +25 V
VSS to GND +0.3 V to −25 V
Analog, Digital Inputs1 VSS − 0.3 V to VDD + 0.3 V or30 mA (whichever occurs first)
Continuous Current, S or D 30 mA
Peak Current, S or D (Pulsed at 1 ms, 10% Duty Cycle max) 100 mA
Operating Temperature Range
Industrial (Y Version) –40°C to +125°C
Storage Temperature –65°C to +150°C
Junction Temperature 150°C
TSSOP, θJA, Thermal Impedance 112°C/W
LFCSP_VQ, θJA, Thermal Impedance 30.4°C/W
Reflow Soldering Peak 260(+0/−5)°C
Temperature (Pb-Free)


Applications:
·Audio and video routing
·Automatic test equipment
·Data-acquisition systems
·Battery-powered systems
·Sample-and-hold systems
·Communication systems
Back to top
View users profile
Post new topic   Reply to topic    Electronics Forum Index -> Circuits Diagrams search All times are GMT + 3 Hours
Page 1 of 1

Valid HTML 4.01 Transitional Valid CSS!Circuits Circuits Circuits Circuits Circuits Circuits
 © KAZUS.INFO - Electronic portal 2003-2010