| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6036 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| 2N6039 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| 2N6040 | Plastic Medium-Power Complementary Silicon Transistors | ON-Semiconductor | - | 3 | - | - | 174 K |
| 2N6058 | Darlington Complementary Silicon Power Transistors | ON-Semiconductor | - | - | - | - | 190 K |
| 2N6059 | Darlington Complementary Silicon Power Transistors | ON-Semiconductor | - | - | - | - | 190 K |
| 2N6059 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 64 K |
| HGTG12N60D1D | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode | Intersil-Corporation | - | - | - | - | 36 K |
| HGTG32N60E2 | 32A, 600V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 33 K |
| STP2N60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP2N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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