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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BUT11NPN Silicon TransistorFairchild-Semiconductor----42 K
BUT11850 V, NPN silicon power transistordistributor-3-65°C150°C648 K
BUT11ANPN Silicon TransistorFairchild-Semiconductor----42 K
BUT11ANPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--22 K
BUT11AFNPN Silicon TransistorFairchild-Semiconductor----47 K
BUT11AFNPN Silicon TransistorFairchild-Semiconductor----47 K
BUT11AFNPN silicon diffused power transistor. For switching power circuitsWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--70 K
BUT11APX-12001200 V, silicon diffused power transistorPhilips-SemiconductorsSOT3--62 K
BUT11F850 V, silicon diffused power transistorPhilips-SemiconductorsSOT3--106 K
BUT11XI1000 V, silicon diffused power transistorPhilips-SemiconductorsSOT3--69 K
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