| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1002 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| HAF1002(L) | Power termal MOSFET | distributor | LDPAK | - | - | - | 35 K |
| HAF1002(S) | Power termal MOSFET | distributor | LDPAK | - | - | - | 35 K |
| MRF1002MA | Microwave pulse power transistor | Motorola | - | 4 | - | - | 109 K |
| MRF1002MB | Microwave pulse power transistor | Motorola | - | 4 | - | - | 109 K |
| PTF10020 | 125 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20240 | 4 | - | - | 313 K |
| PTF10021 | 30 watts, 1.4-1.6 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20237 | 4 | - | - | 278 K |
| UF1002 | 1AMP ultra fast switching rectifier | distributor | - | 2 | -65°C | 150°C | 759 K |
| UF1002FCT | Reverse voltage: 200.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
| UF1002FCT | Reverse voltage: 200.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
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