| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1003 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| MRF10031 | Microwave long pulse power transistor | Motorola | - | 3 | - | - | 101 K |
| MRF10031MB | 30 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 163 K |
| PTF10031 | 50 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20222 | 4 | - | - | 215 K |
| PTF10036 | 85 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20240 | 4 | - | - | 220 K |
| UF1003 | 1AMP ultra fast switching rectifier | distributor | - | 2 | -65°C | 150°C | 759 K |
| UF1003F | Reverse voltage: 300.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
| UF1003F | Reverse voltage: 300.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
| UF1003FCT | Reverse voltage: 300.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
| UF1003FCT | Reverse voltage: 300.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
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