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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F1007Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C38 K
MRF10070Microwave pulse power transistorMotorola-3--97 K
UF10071AMP ultra fast switching rectifierdistributor-2-65°C150°C759 K
UF10071000V; 1.0A ultra-fast rectifier; high current capability and high speed switchingdistributor-2-65°C150°C62 K
UF10071000V, 1.0A ultra fast rectifierdistributor-2-55°C150°C35 K
UF1007M1000V, 1.0A ultra fast rectifierdistributor-2-55°C125°C35 K

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