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F1019 datasheet. Datasheets search system |
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Example: max232 |
Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|---|---|---|---|---|---|---|
F1019 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
PTF10193 | 12 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20259 | 3 | - | - | 331 K |
PTF10195 | 125 watts, 869-894 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20248 | 3 | - | - | 328 K |
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