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M5M29GB160

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M29GB160BVP16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C197 K
M5M29GB160BVP-80CMOS 3.3V-only block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C75°C229 K
M5M29GB160BWG16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-20°C85°C197 K
M5M29GB160BWG16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupCSP48-20°C85°C200 K
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