| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQP2N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 570 K |
| MTP2N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 219 K |
| PHP2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| PHP2N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 94 K |
| PHP2N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 94 K |
| SSP2N60B | 600V, 2A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 856 K |
| STP2N60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP2N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
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