Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1MBC15-060 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 233 K |
GC79BNBC15R | Ins.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks | distributor | - | - | - | - | 852 K |
GC79BNBC15RS | Ins.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks | distributor | - | - | - | - | 852 K |
IRG4BC15MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5A | International-Rectifier | - | 3 | -55°C | 150°C | 256 K |
IRG4BC15UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International-Rectifier | - | 3 | -55°C | 150°C | 255 K |
IRG4BC15UD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 210 K |
IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 210 K |
SBC15-11EGWA | 38 mm (1.5 inch) single digit numeric display. High efficiency red, green. | distributor | - | 10 | -40°C | 85°C | 671 K |
TBC15-11EGWA | 36 mm (1.5 inch) 8 x 8 dot matrix display. High efficiency red, green. | distributor | - | 24 | -40°C | 85°C | 195 K |
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