| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSS123 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 284 K |
| BSS123 | N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT23 | - | - | - | 56 K |
| BSS123 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 133 K |
| BSS123 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
| BSS123 | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
| BSS123-7 | 100V; 170mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 67 K |
| BSS123A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
| BSS123A | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 45 K |
| BSS123LT1 | TMOS FET transistor | Motorola | - | 3 | -55°C | 150°C | 93 K |
| BSS123W | 100V; 170mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 67 K |
| 1 [2] |
|---|
