| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5550 | Glass Passivated Junction Rectifier | General-Semiconductor | G4 | - | - | - | 53 K |
| 1N5551 | Glass Passivated Junction Rectifier | General-Semiconductor | G4 | - | - | - | 53 K |
| 1N5552 | Glass Passivated Junction Rectifier | General-Semiconductor | G4 | - | - | - | 53 K |
| 2N5550 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 28 K |
| 2N5550 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 147 K |
| 2N5550S | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 152 K |
| 2N5551 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 500 K |
| 2N5551 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 146 K |
| 2N5551C | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 164 K |
| 2N5551S | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 150 K |
| [1] 2 [3] [4] [5] [6] [7] |
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