| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGW20N120 | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 231 K |
| MGW20N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 139 K |
| MGW20N60D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 246 K |
| MTW20N50E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 193 K |
| SGW20N60RUF | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 538 K |
| STGW20NB60H | N-CHANNEL 20A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| STGW20NB60HD | N-CHANNEL 20A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 90 K |
| STGW20NB60K | N-CHANNEL 20A 600V TO-247 SHORT CIRCUIT PROOF POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 279 K |
| STW20NA50 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 148 K |
| STW20NB50 | N-CHANNEL ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
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