| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| VI-2NXEX | InputV:48V; outputV:5.2V; 50-200W; 10-40A; DC-DC converter | distributor | - | 9 | -10°C | 85°C | 37 K |
| VI-JNXEX | InputV:48V; outputV:5.2V; 25-100W; DC-DC converter | distributor | - | 9 | -10°C | 100°C | 33 K |
| VI-JNXEX | InputV:48V; outputV:5.2V; 25-100W; DC-DC converter | distributor | - | 9 | -10°C | 100°C | 33 K |
| W4NXE4C-0D00 | Diameter: 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE4C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE4C-SD00 | Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE8C-0D00 | Diameter: 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE8C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE8C-SD00 | Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
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