| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1206 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 36 K |
| F1207 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F1208 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| F1209 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 36 K |
| IT120A | Monolithic dual NPN transistor | Linear-Integrated-System-Inc-Linear-Systems | - | 6 | -65°C | 150°C | 25 K |
| OM120L60SB | 600V, up to 150 Amp IGBT with FRED diodes | distributor | - | 3 | -55°C | 150°C | 37 K |
| XC3120A-4PC68C | Field programmable gate array. | distributor | Plastic PLCC | 68 | 0°C | 85°C | 731 K |
| XC3120A-4PC68I | Field programmable gate array. | distributor | Plastic PLCC | 68 | -40°C | 100°C | 731 K |
| XC3120A-4PC84C | Field programmable gate array. | distributor | Plastic PLCC | 84 | 0°C | 85°C | 731 K |
| XC3120A-4PQ100C | Field programmable gate array. | distributor | Plastic PQFP | 100 | 0°C | 85°C | 731 K |
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