| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5KP28A | 31.1-34.4V transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 1 M |
| 5KP28A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=31.1V(min), VBR=34.4V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | distributor | - | 2 | -55°C | 175°C | 970 K |
| D2587P285 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 192.85 THz. Center wavelength 1554.54 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| MA4P282-287T | 100 V, Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -65°C | 150°C | 210 K |
| MA4P282CA-287T | 100 V, Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -65°C | 150°C | 210 K |
| MA4P282CK-287T | 100 V, Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -65°C | 150°C | 210 K |
| MA4P282ST-287T | 100 V, Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -65°C | 150°C | 210 K |
| MA4P282ST-287T | 100 V, Surface mount plastic PIN diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -65°C | 150°C | 210 K |
| P281 | 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 38 K |
| P282 | 5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 39 K |
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