| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC640 | 625mW PNP complementary silicon transistor | distributor | - | 3 | -55°C | 150°C | 184 K |
| HCC640 | Surface mount optically coupled isolator | distributor | Surface mount | 6 | -55°C | 125°C | 193 K |
| HCC640B | Surface mount optically coupled isolator | distributor | Surface mount | 6 | -55°C | 125°C | 193 K |
| IN74AC640N | Octal 3-state inverting bus transceiver high-speed silicon-gate CMOS | distributor | Plastic DIP | 20 | -40°C | 85°C | 197 K |
| IN74AC640N | Octal 3-state inverting bus transceiver high-speed silicon-gate CMOS | distributor | Plastic DIP | 20 | -40°C | 85°C | 197 K |
| IN74AC640N | Octal 3-state inverting bus transceiver high-speed silicon-gate CMOS | distributor | Plastic DIP | 20 | -40°C | 85°C | 197 K |
| IRC640 | HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm | International-Rectifier | - | 5 | -55°C | 150°C | 228 K |
| MT5C6408EC-12L/883C | 8K x 8 SRAM memory array | distributor | LCC | 28 | -55°C | 125°C | 100 K |
| MT5C6408EC-15L/883C | 8K x 8 SRAM memory array | distributor | LCC | 28 | -55°C | 125°C | 100 K |
| MT5C6408EC-25L/883C | 8K x 8 SRAM memory array | distributor | LCC | 28 | -55°C | 125°C | 100 K |
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