| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1S1834 | Silicon diode for high speed (fast recovery) rectifier applications | Toshiba | - | 2 | -40°C | 125°C | 130 K |
| 1S1835 | Silicon diode for high speed (fast recovery) rectifier applications | Toshiba | - | 2 | -40°C | 125°C | 130 K |
| 1S1885A | Silicon diode for general purpose rectifier applications | Toshiba | - | 2 | -40°C | 150°C | 131 K |
| IDT71V35761S183BG | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | BGA | 119 | 0°C | 70°C | 282 K |
| IDT71V35761S183BGI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | BGA | 119 | -40°C | 85°C | 282 K |
| IDT71V35761S183BGI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | BGA | 119 | -40°C | 85°C | 282 K |
| IDT71V35761S183BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | 0°C | 70°C | 282 K |
| IDT71V35761S183PF | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | TQFP | 100 | 0°C | 70°C | 282 K |
| IDT71V35761S183PF | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | TQFP | 100 | 0°C | 70°C | 282 K |
| IDT71V35761S183PFI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | TQFP | 100 | -40°C | 85°C | 282 K |
| IDT71V35781S183PF | 256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | TQFP | 100 | 0°C | 70°C | 282 K |
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