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2307

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
23077 W, 20 V, 2300 MHz common base transistordistributor55BT3--268 K
ASI2307NPN silicon RF power transistorAdvanced-Semiconductor-Inc--2-65°C200°C18 K
CXD2307R10-bit 50MSPS RGB 3-Channel D/A ConverterSony-Semiconductor----250 K
M52307P3-channel video amplifiers for high-resolution displayMitsubishi-Electric-Corporation-Semiconductor-Group-28-20°C85°C548 K
M52307SP3-channel video amplifiers for high-resolution displayMitsubishi-Electric-Corporation-Semiconductor-Group-28-20°C85°C548 K
MC92307CI1K-samples FFT-ptocessorMotorolaQFP160--121 K
MSC82307GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORSSGS-Thomson-Microelectronics----51 K
NTE2307Silicon NPN transistor. High gain power amplifier.distributor-30°C150°C20 K
RF2307General purpose amplifierRF-Micro-Devices-RFMDSOP8-40°C85°C59 K
RF2307PCBAGeneral purpose amplifierRF-Micro-Devices-RFMDSOP8-40°C85°C59 K
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