| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK2312 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Toshiba | - | 3 | -55°C | 150°C | 288 K |
| 2SK2312 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Toshiba | - | 3 | -55°C | 150°C | 288 K |
| CXD2312R | 9-bit 20MSPS Video A/D Converter | Sony-Semiconductor | - | - | - | - | 305 K |
| DRR1-2312 | Digital radio receiver down modul for 21.2 to 23.6 GHz | distributor | - | 11 | -30°C | 70°C | 61 K |
| DRT1-2312 | Digital radio transmitter modul for 21.2 to 23.6 GHz | distributor | - | 12 | -30°C | 70°C | 59 K |
| LC662312A | 4-bit single-chip microcontroller with 12 KB of on-chip ROM | SANYO-Electric-Co--Ltd- | DIP42S | 42 | -30°C | 70°C | 158 K |
| REC10-2312SRWL | 10W DC/DC converter with 23V input, 12/830mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
| REC10-2312SRWLZ | 10W DC/DC converter with 23V input, 12/830mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
| RF2312 | Linear general purpose amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 274 K |
| RF2312PCBA | Linear general purpose amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 274 K |
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