| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6517 | NPN Epitaxial Silicon Transistor - High Voltage Transistor | Fairchild-Semiconductor | - | - | - | - | 26 K |
| 2N6517 | Ic=500mA, Vce=10V transistor | distributor | - | - | - | - | 427 K |
| 2N6517 | High Voltage Transistors | ON-Semiconductor | - | 3 | - | - | 229 K |
| 2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 47 K |
| 2N6517 | NPN silicon planar medium power transistor | Zetex-Semiconductor | - | 3 | -55°C | 200°C | 27 K |
| 2N6517 | NPN silicon planar medium power transistor | Zetex-Semiconductor | - | 3 | -55°C | 200°C | 27 K |
| 2N6517RLRA | High Voltage Transistors | ON-Semiconductor | - | 3 | - | - | 229 K |
| 2N6517RLRP | High Voltage Transistors | ON-Semiconductor | - | 3 | - | - | 229 K |
| H2N6517 | 500mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltages | distributor | - | 3 | - | - | 41 K |
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