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2N6517

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N6517NPN Epitaxial Silicon Transistor - High Voltage TransistorFairchild-Semiconductor----26 K
2N6517Ic=500mA, Vce=10V transistordistributor----427 K
2N6517High Voltage TransistorsON-Semiconductor-3--229 K
2N6517High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C47 K
2N6517NPN silicon planar medium power transistorZetex-Semiconductor-3-55°C200°C27 K
2N6517NPN silicon planar medium power transistorZetex-Semiconductor-3-55°C200°C27 K
2N6517RLRAHigh Voltage TransistorsON-Semiconductor-3--229 K
2N6517RLRPHigh Voltage TransistorsON-Semiconductor-3--229 K
H2N6517500mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltagesdistributor-3--41 K
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