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6169

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N6169Transient Voltage SuppressorMicrosemi-CorporationG---104 K
1N61691500W BI-polarity transient voltage suppressorSemtech-CorporationSmall2-65°C175°C111 K
1N6169ATransient Voltage SuppressorMicrosemi-CorporationG---104 K
1N6169AQPL 1500 watt axial leaded TVSSemtech-CorporationGlass2-65°C175°C31 K
1N6169AUSTransient Voltage SuppressorMicrosemi-Corporation----104 K
1N6169USTransient Voltage SuppressorMicrosemi-Corporation----104 K
M5M4V16169DRT-1516M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-1016M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-1516M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-716M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
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