| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962H3829435BNA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | distributor | FlatPack | 28 | -55°C | 125°C | 100 K |
| 5962H3829435BNA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | distributor | FlatPack | 28 | -55°C | 125°C | 100 K |
| CEM9435 | 30V P-channel enhancement mode MOSFET | Chino-Excel-Technology-Corporation | - | 8 | -55°C | 150°C | 496 K |
| CEM9435A | 30V P-channel enhancement mode MOSFET | Chino-Excel-Technology-Corporation | - | 8 | -55°C | 150°C | 499 K |
| CET9435A | P-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 503 K |
| FDS9435A | Single P-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 8 | - | - | 244 K |
| MMJT9435 | Bipolar power transistor | Motorola | - | 4 | -55°C | 150°C | 94 K |
| NDS9435A | Single P-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 8 | - | - | 219 K |
| SDM9435A | 30V; 5.3A; 2.5W; dual enchanced mode field effect transistor (N and P - channel) | distributor | Surface mount | 8 | -55°C | 150°C | 359 K |
| SDU9435A | 30V; 10A; 2.5W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 396 K |
| SI9435DY | P-channel logic level MOSFET, 30V, 5.3A | Fairchild-Semiconductor | SO | 8 | -55°C | 150°C | 101 K |
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