Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BC309 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | 3 | - | - | 69 K |
BC309 | PNP transistor for general purpose applications and low noise amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 144 K |
BC309 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 2 | -55°C | 150°C | 225 K |
BC309 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. | distributor | - | 3 | 0°C | 150°C | 49 K |
BC309B | PNP silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 110 K |
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