| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCR108 | NPN silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 35 K |
| BCR108S | NPN silicon digital transistor array | Infineon-formely-Siemens | - | 6 | - | - | 43 K |
| BCR108W | NPN silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 34 K |
| BCR10CM | 10A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 94 K |
| BCR10CM-12 | 600V, 10A triac | distributor | - | - | - | - | 80 K |
| BCR10CM-12L | 600V, 10A triac | distributor | - | - | - | - | 80 K |
| BCR10CS | 10A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 86 K |
| BCR10PM | 10A semiconductor for medium power use, insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 93 K |
| BCR10PN | NPN/PNP silicon digital transistor array | Infineon-formely-Siemens | - | 6 | - | - | 62 K |
| BCR10UM | 10A semiconductor for medium power use, insulated type, glass passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 55 K |
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