Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MRF10005 | 5 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 160 K |
MRF10005 | Microwave power transistor | Motorola | - | 3 | - | - | 100 K |
MRF1000MB | 0.7 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 104 K |
PTF10007 | 35 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20222 | 4 | - | - | 235 K |
PTF10009 | 85 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20230 | 6 | - | - | 228 K |
TSMF1000 | High speed IR emitter diode | Vishay-Telefunken | - | - | - | - | 38 K |
UF1000F | Reverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1000F | Reverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1000FCT | Reverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
UF1000FCT | Reverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
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