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F1006

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F1006Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-4-65°C150°C37 K
PTF1006530 watts, 1.93-1.99 GHz GOLDMOS field effect transistorEricsson-Microelectronics202373--94 K
UF10061AMP ultra fast switching rectifierdistributor-2-65°C150°C759 K
UF1006Reverse voltage: 600.00V; 10A ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1006Reverse voltage: 600.00V; 10A ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1006CTReverse voltage: 600.00V; 10A ultrafast glass passivated rectifierdistributor-3-65°C150°C48 K
UF1006CTReverse voltage: 600.00V; 10A ultrafast glass passivated rectifierdistributor-3-65°C150°C48 K
UF1006FReverse voltage: 600.00V; 10A isolated ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1006FReverse voltage: 600.00V; 10A isolated ultrafast glass passivated rectifierdistributor-2-65°C150°C44 K
UF1006FCTReverse voltage: 600.00V; 10A isolated ultrafast glass passivated rectifierdistributor-3-65°C150°C46 K
UF1006FCTReverse voltage: 600.00V; 10A isolated ultrafast glass passivated rectifierdistributor-3-65°C150°C46 K
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