Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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F1006 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
PTF10065 | 30 watts, 1.93-1.99 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20237 | 3 | - | - | 94 K |
UF1006 | 1AMP ultra fast switching rectifier | distributor | - | 2 | -65°C | 150°C | 759 K |
UF1006 | Reverse voltage: 600.00V; 10A ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1006 | Reverse voltage: 600.00V; 10A ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1006CT | Reverse voltage: 600.00V; 10A ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 48 K |
UF1006CT | Reverse voltage: 600.00V; 10A ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 48 K |
UF1006F | Reverse voltage: 600.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1006F | Reverse voltage: 600.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 2 | -65°C | 150°C | 44 K |
UF1006FCT | Reverse voltage: 600.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
UF1006FCT | Reverse voltage: 600.00V; 10A isolated ultrafast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 46 K |
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