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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
F106920 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistordistributor-2-65°C150°C36 K
MF1069S-1Filter for the RF circuitMitsubishi-Electric-Corporation-Semiconductor-GroupSMD--20°C70°C147 K

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