| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| SSW4N60B | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 642 K |
| W4NRE0X-0D00 | Diameter: 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE4C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE4C-SD00 | Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE8C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE8C-SD00 | Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
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