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b2N60 datasheet. Datasheets search system |
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Example: max232 |
Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FQB2N60 | 600V N-Channel MOSFET, 2.4A | Fairchild-Semiconductor | D2PAK | 3 | -55°C | 150°C | 580 K |
MTB2N60E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 271 K |
PHB2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
PHB2N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 94 K |
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