Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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NE4210M01 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 79 K |
NE4210M01-T1 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 79 K |
NE4210M01-T2 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 79 K |
NE4210S01-T1 | GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification | NEC-Electronics-Inc- | - | - | - | - | 65 K |
NE4210S01-T1B | GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification | NEC-Electronics-Inc- | - | - | - | - | 65 K |
R3111E421A-TZ | Low voltage detector. Detector threshold (-Vdet) 4.2V. Output type: Nch open drain. | distributor | - | 3 | -40°C | 85°C | 205 K |
R3111E421C-TZ | Low voltage detector. Detector threshold (-Vdet) 4.2V. Output type: CMOS | distributor | - | 3 | -40°C | 85°C | 205 K |
TLE4211 | Intelligent double low-side switch | Infineon-formely-Siemens | - | 7 | - | - | 373 K |
TLE4214G | Intelligent double low-side switch | Infineon-formely-Siemens | - | 20 | - | - | 371 K |
TLE4216G | Intelligent sixfold low-side switch | Infineon-formely-Siemens | - | 24 | - | - | 180 K |
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